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| inchange semiconductor product specification silicon npn power transistors BUH1015 description ? with to-3pn package. ? high voltage. ? high switching speed. applications ? horizontal deflection for colour tv and monitors. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 14 a i cm collector current -peak 18 a i b base current 8 a i bm base current -peak 11 a p c collector power dissipation t c =25 ?? 160 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUH1015 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 700 v v cesat collector-emitter saturation voltage i c =10a; i b =2a 1.5 v v besat base-emitter saturation voltage i c =10a; i b =2a 1.5 v i ces collector cut-off current v ce =1500v ;v be =0 t j =125 ?? c 0.2 2 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =10a ; v ce =5v 7 10 14 switching times t s storage time 1.5 | s t f fall time i c =10a;i b1 =2a;i b2 =-6a; v cc =400v 110 ns thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 0.78 ?? /w inchange semiconductor product specification 3 silicon npn power transistors BUH1015 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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